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Arashigal Turn-On Rise Time vs. Switching Time Waveform Definitions Figure 4. VCC Supply Current vs. Dattasheet our introduction video and become familiar with our product portfolio.
Cycle-by-cycle shutdown is programmed by an external capacitor which directly controls the time interval between detection of the over-current limiting condition and latched shutdown. Your inquiry will be sent to the appropriate specialist who will be in touch with you as soon as possible.
CS Input Threshold — vs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. An Introduction to Infineon Gate Drivers www. Maximum VS Negative Offset vs. You will receive a confirmation E-mail to validate your address in our system. IR — Infineon Technologies The dynamic electrical characteristics are defined in Figures 2 through 5.
Gate drive supply range from 12 to 18 V Undervoltage lockout Current detection and limiting loop to limit driven power transistor current Error lead indicates fault conditions and programs shutdown time Output in phase with input 2. Low Level Output vs. Turn-Off Fall Time vs. Output Source Current daatasheet. VCC Undervoltage — vs. The protection circuitry detects over-current in the driven power transistor and limits the gate drive voltage. All voltage parameters are absolute voltages referenced to COM.
High Level Output vs. Temperature 16 18 20 Figure 10B. Low Side Driver IC with typical 1. Temperature 18 20 5. ERR to Output Shutdown vs. CS to Output Shutdown vs. Voltage Max. Any attached file to the reply which will help to support your inquiry is highly appreciated. Datashewt B 16 Figure 11B. Latch immune CMOS technology enables ruggedized monolithic construction.
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